inchange semiconductor product specification silicon npn power transistors 2SC3277 description with to-3pn package high voltage ,high current fast switching speed wide area of safe operation applications 400v/10a switching r egulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 20 a p c collector power dissipation t c =25 90 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3277 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = 400 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =6a ;i b =1.2a 1.0 v v besat base-emitter saturation voltage i c =6a ;i b =1.2a 1.5 v i cbo collector cut-off current v cb =400v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =1.2a ; v ce =5v 15 50 h fe-2 dc current gain i c =6a ; v ce =5v 8 f t transition frequency i c =1.2a ; v ce =10v 20 mhz c ob output capacitance i e =0 ; v cb =10v;f=1mhz 120 pf switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time i c =7a;i b1 =-i b2 =1.4a r l =28.6 ,p w =20 s v cc =200v 1.0 s ? h fe-1 classifications l m n 15-30 20-40 30-50
inchange semiconductor product specification 3 silicon npn power transistors 2SC3277 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC3277
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